transient voltage suppressors for esd protection revision december 18 , 2013 1 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd 05v02 d - la un semiconductor co., ltd. www. unsemi .com .tw 0201/ d fn 0603 the esd 05v02 d - l a is a single - channel ultra low capacitance rail clamp esd protection diodes array including a pair of esd diodes that steer positive or negative esd current to respectively positive or negative rail . tvs arrays desig ned to protect high speed data interfaces. this series has been specifically designed to protect sensitive components which are connected to high - speed data and transmission lines from over - voltage caused by esd (electrostatic discharge), cde (cable discha rge events), and eft (electrical fast transients). ? super low capacitance between input and ground is no more than 0.9pf surface mount package ; ? low clamping voltage ; ? single - channel esd protection; ? low leakage ; ? provide esd protection meeting iec 61000 - 4 - 2(esd): 15kv air discharge 10kv contact discharge; ? ultra small smd package:0201 ; ? cell phone handsets and accessories ? microprocessor based equipment ? personal digital assistants (pdas) ? notebooks (dvi/hdmi); , desktops, and servers ? portable instrumentation ? high - spee d data line interface ? usb(1.1/2.0/3.0) interface; ? case:0201/ dfn 0603 package molded plastic. ? terminals: gold plated, solderable per mil - std - 750, m ethod 2026. ? polarity: color band denotes cathode end. ? mounting position: any ? reel size : 7 inc h symbol parameter value units p p p peak pulse power (tp=8/20s waveform) 120 w i p p peak pulse current (tp=8/20s waveform) 5 .0 a t j operating junction temperature range - 55 to +125 oc t stg storage temperature range - 55 to +150 oc t l soldering temperature, t max = 10s 260 oc iec61000 - 4 - 2 (esd) air discharge 1 5 kv contact discharge 10 mechanical characteristic s d escription feature functional diagram applications mechanical data
transient voltage suppressors for esd protection revision december 18 , 2013 2 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd 05v02 d - la un semiconductor co., ltd. www. unsemi .com .tw characteristics symbol test conditions min. typ. max. unit reverse working voltage v rwm any i/o pin to gnd -- -- 5 v reverse breakdown voltage v br any i/o pin to gnd it=1ma 6 -- - - v reverse leakag e current i r v rwm =5v -- -- 1 c1 i pp =1a p =8/20 -- 8 .5 1 2 v capacitance between i/o and gnd c j2 v r =0v -- 0 .5 0 .9 pf electrical characteristics ( @ 25 unless otherwise specified ) characteristic curves 60ns 10% percent of peak pulse current % 30ns tr = 0.7~1ns time (ns) 90% 100% fig1. 8/20 s pulse waveform fig2 . esd p ulse w aveform ( according to iec 61000 - 4 - 2 ) fig3. power derating curve
transient voltage suppressors for esd protection revision december 18 , 2013 3 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd 05v02 d - la un semiconductor co., ltd. www. unsemi .com .tw fig4. clamping voltage vs. peak pulse current fig 5 . capacitance between terminals characteristics characteristic curves 0201/ d fn 0603 package outline & dimensions land layout mechanical details
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